MEMS Technology
Our technologies are based on, but not limited to, the equipment of the renowned MESA+ Nanolab with its quarantined process lines for
- Ultra Clean Processing CMOS-like
- Metal Free Processing High-T: Thermal oxidation, LPCVD, TEOS
- In Line Processing Glasses, Metals, Polymers
| MEMS Technologies | Applications |
| SOI (silicon on insulator) | Movable MEMS and MEMS with accurate thickness |
| DRIE (deep RIE) | High aspect ratio etching, Bosch process Through wafer etching for fluid ports, view ports or other access holes Movable MEMS |
| Wafer bonding | Direct bonding, anodic bonding, thermocompression bonding, eutectic bonding for 1st level waferscale packaging and microfluidics |
| Release etch | HF Vapor and XeF2 |
| Bonding and etchback | For composite MEMS structures |
| Metal encapsulation , dielectric capping | For high temperature applications, electrical isolation or metal multi layers |
| Front to back side alignment | For membranes or back side contacts |
| Thin membranes | Si3N4 thin membranes for example used in TEM and SEM (transmission or scanning electron microscopy) or sensing |
| CMP (chemical mechanical polishing) | For planarization of substrates |
| Surface micromachining | Released structures in cavities built of thin layers of polysilicon and silicon dioxide or silicon nitride |
| Polymers | Polyimide, Parylene |
| Standard Technologies | Example Applications |
| 100 mm wafers | Silicon, Fused silica and Borosilicate glasses |
| Wet etching | Bulk micromachining of silicon, isotropic etching of thin films (dielectrics and metals) |
| RIE (reactive ion etching) | Si, SiO2, Si3N4 |
| RIBE (reactive ion beam etching) | All materials |
| Evaporation and sputtering | Metals like Al, Au, Cr, Cu, Ni, Pd, Pt, Ta, Ti, Mo, etc. |
| LPCVD and PECVD (low pressure and plasma enhanced chemical vapor deposition) | Silicon oxides, silicon nitrides, polysilicon and Ta2O5 |
| Ion implantation | FETs, diodes, piezoresistors |
